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    Review Articles MORE
    • Optical and electrical properties of two-dimensional anisotropic materials
      Ziqi Zhou, Yu Cui, Ping-Heng Tan, Xuelu Liu, Zhongming Wei
      J. Semicond. 2019, 40(6): 061001
      doi: 10.1088/1674-4926/40/6/061001
      AbstractFull Text
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      Two-dimensional (2D) anisotropic materials, such as B-P, B-As, GeSe, GeAs, ReSe2, KP15 and their hybrid systems, exhibit unique crystal structures and extraordinary anisotropy. This review presents a comprehensive comparison of various 2D anisotropic crystals as well as relevant FETs and photodetectors, especially on their particular anisotropy in optical and electrical properties. First, the structure of typical 2D anisotropic crystal as well as the analysis of structural anisotropy is provided. Then, recent researches on anisotropic Raman spectra are reviewed. Particularly, a brief measurement principle of Raman spectra under three typical polarized measurement configurations is introduced. Finally, recent progress on the electrical and photoelectrical properties of FETs and polarization-sensitive photodetectors based on 2D anisotropic materials is summarized for the comparison between different 2D anisotropic materials. Beyond the high response speed, sensitivity and on/off ratio, these 2D anisotropic crystals exhibit highly conduction ratio and dichroic ratio which can be applied in terms of polarization sensors, polarization spectroscopy imaging, optical radar and remote sensing.
      Citation
      Ziqi Zhou, Yu Cui, Ping-Heng Tan, Xuelu Liu, Zhongming Wei. Optical and electrical properties of two-dimensional anisotropic materials[J]. Journal of Semiconductors, 2019, 40(6): 061001. doi: 10.1088/1674-4926/40/6/061001.

      Z Q Zhou, Y Cui, P H Tan, X L Liu, Z M Wei, Optical and electrical properties of two-dimensional anisotropic materials[J]. J. Semicond., 2019, 40(6): 061001. doi: 10.1088/1674-4926/40/6/061001.Export: BibTex EndNote
    • Atomically thin α-In2Se3: an emergent two-dimensional room temperature ferroelectric semiconductor
      Yue Li, Ming Gong, Hualing Zeng
      J. Semicond. 2019, 40(6): 061002
      doi: 10.1088/1674-4926/40/6/061002
      AbstractFull Text
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      Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film thickness is reduced to nanometer or single atomic layer limit. Two-dimensional (2D) materials, thanks to their stable layered structure, saturate interfacial chemistry, weak interlayer couplings, and the benefit of preparing stable ultra-thin film at 2D limit, are promising for exploring 2D ferroelectricity and related device applications. Therefore, it provides an effective approach to overcome the limitation in conventional ferroelectrics with the study of 2D ferroelectricity in van der Waals (vdW) materials. In this review article, we briefly introduce recent progresses on 2D ferroelectricity in layered vdW materials. We will highlight the study on atomically thin α-In2Se3, which is an emergent ferroelectric semiconductor with the coupled in-plane and out-of-plane ferroelectricity. Furthermore, two prototype ferroelectric devices based on ferroelectric α-In2Se3 will also be reviewed.
      Citation
      Yue Li, Ming Gong, Hualing Zeng. Atomically thin α-In2Se3: an emergent two-dimensional room temperature ferroelectric semiconductor[J]. Journal of Semiconductors, 2019, 40(6): 061002. doi: 10.1088/1674-4926/40/6/061002.

      Y Li, M Gong, H L Zeng, Atomically thin α-In2Se3: an emergent two-dimensional room temperature ferroelectric semiconductor[J]. J. Semicond., 2019, 40(6): 061002. doi: 10.1088/1674-4926/40/6/061002. Export: BibTex EndNote
    • Synthesis, properties, and applications of large-scale two-dimensional materials by polymer-assisted deposition
      Hongtao Ren, Yachao Liu, Lei Zhang, Kai Liu
      J. Semicond. 2019, 40(6): 061003
      doi: 10.1088/1674-4926/40/6/061003
      AbstractFull Text
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      Two-dimensional (2D) materials have attracted considerable attention because of their novel and tunable electronic, optical, ferromagnetic, and chemical properties. Compared to mechanical exfoliation and chemical vapor deposition, polymer-assisted deposition (PAD) is more suitable for mass production of 2D materials owing to its good reproducibility and reliability. In this review, we summarize the recent development of PAD on syntheses of 2D materials. First, we introduce principles and processing steps of PAD. Second, 2D materials, including graphene, MoS2, and MoS2/glassy-graphene heterostructures, are presented to illustrate the power of PAD and provide readers with the opportunity to assess the method. Last, we discuss the future prospects and challenges in this research field. This review provides a novel technique for preparing 2D layered materials and may inspire new applications of 2D layered materials.
      Citation
      Hongtao Ren, Yachao Liu, Lei Zhang, Kai Liu. Synthesis, properties, and applications of large-scale two-dimensional materials by polymer-assisted deposition[J]. Journal of Semiconductors, 2019, 40(6): 061003. doi: 10.1088/1674-4926/40/6/061003.

      H T Ren, Y C Liu, L Zhang, K Liu, Synthesis, properties, and applications of large-scale two-dimensional materials by polymer-assisted deposition[J]. J. Semicond., 2019, 40(6): 061003. doi: 10.1088/1674-4926/40/6/061003.Export: BibTexEndNote
    • Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites
      Haizhen Wang, Chen Fang, Hongmei Luo, Dehui Li
      J. Semicond. 2019, 40(4): 041901
      doi: 10.1088/1674-4926/40/4/041901
      AbstractFull Text
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      Two-dimensional (2D) hybrid organic-inorganic perovskites have recently attracted attention due to their layered nature, naturally formed quantum well structure, large exciton binding energy and especially better long-term environmental stability compared with their three-dimensional (3D) counterparts. In this report, we present a brief overview of the recent progress of the optoelectronic applications in 2D perovskites. The layer number dependent physical properties of 2D perovskites will first be introduced and then the different synthetic approaches to achieve 2D perovskites with different morphologies will be discussed. The optical, optoelectronic properties and self-trapped states in 2D perovskites will be described, which are indispensable for designing the new device structures with novel functionalities and improving the device performance. Subsequently, a brief summary of the advantages and the current research status of the 2D perovskite-based heterostructures will be illustrated. Finally, a perspective of 2D perovskite materials is given toward their material synthesis and novel device applications.
      Citation
      Haizhen Wang, Chen Fang, Hongmei Luo, Dehui Li. Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites[J]. Journal of Semiconductors, 2019, 40(4): 041901. doi: 10.1088/1674-4926/40/4/041901.

      H Z Wang, C Fang, H M Luo, D H Li, Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites[J]. J. Semicond., 2019, 40(4): 041901. doi: 10.1088/1674-4926/40/4/041901.Export: BibTex EndNote
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    • position of the monolay Review on the quantum emitters in two-dimensional materials
      Shuliang Ren, Qinghai Tan, Jun Zhang
      AbstractFull Text
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      The solid state single photon source is fundamental key devices for application of quantum communication, quantum computing, quantum information and quantum precious metrology. After years searching, researchers have found the single photon emitters in zero-dimensional quantum dots (QDS), one-dimensional nanowires, three-dimensional wide bandgap materials, as well as two-dimensional (2D) materials developed recently. Here we will give a brief review on the single photon emitters in 2D van der Waals materials. We will firstly introduce the quantum emitters from various 2D materials and their characteristics. Then we will introduce the electrically driven quantum light in the transitions metal dichalcogenides (TMDs)-based light emitting diode (LED). In addition, we will introduce how to tailor the quantum emitters by nanopillar and strain engineering, the entanglement between chiral phonons (CPs) and single photon in monolayer TMDs. Finally, we will give a perspective on the opportunities and challenges of 2D materials-based quantum light sources.
      Citation
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    Volume 40, Issue 6, Jun 2019

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